Will the Input Voltage affects the Nand Flash of Solid State Drives (SSDs) ?
In ITS (Intelligent Transportation Systems), PIS (Passenger Information System) and other embedded in-vehicle application, such as video surveillance, data recorder…usually or sometimes the voltage changes unstably, SSD as embedded memory and storage device when doing data video recording is aggressively affected by the unstable input voltage. First of all, please let me introduce RBER (Raw-Bit Error Rate), RBER is the Bit Error Rate before ECC (Error Correction Code) performing, reflects the initial reliability of Nand flash. The higher RBER, the less reliability of Nand flash. Then, how Input Voltage Affects the Nand Flash of SSD? Firstly, per 0.3V as a voltage difference in set time, the below graph is 3.3V-3.6V fluctuation. (1) When setting 2.7V - 3.V (standard voltage range of NAND flash), the RBER of NAND flash is 10^(-5.850), which is in normal range. (2) When setting as 3.6V - 3.9V, the RBER begins to increase, reach at 10^(-5.845). (3) When Voltage ran...