Industrial & Military standard SSD

rBackup (Rapid Backup) refers to a technique of how to flush data stored in DDR into NAND Flash within a very short period. It is developed by Renice to solve the problem that regular power failure protecting mechanism (based on super capacitor or tantalum capacitor) does not work when capacitor ages with power less than initial design as time goes by. Background Mainstream SSD deploy SDRAM or DDR to improve the R/W speed. That follows the issue of data loss or mapping table loss when sudden power failure occurs. To guarantee the data integrity, usually SSD makers design a power failure protecting mechanism based on Super-Capacitor or Tantalum Capacitor, which will work as backup power for SSD in power failure circumstance. This design seems to be perfect to balance the performance and reliability. However there is a potential hazard behind it in real application. Both Super-Capacitor and Tantalum Capacitor keep aging as charge & discharge times increase. Common warranty pe...

Renice X9 R-SATA Technical Highlight 1. Secure Erase, support Physical Destroy and Logical Destroy 1.1. Physical destroy Implemented by HW button, with time-sharing shunt design to guarantee each NAND Flash been destroyed. The disk is scraped after destroy and data cannot be recovered by any means. 1.2. Logical destroy Support SW and HW methods. 1.2.1 After data destruction, the disk cannot be recognized by HOST, and data cannot be recovered by any means; 1.2.2 After destruction, all data in disk become FF, cannot be recovered. The disk is enabling to be used after initialization. 2. r-Backup technical patent, to keep the integrity of data information under abnormal power-off even when capacitor aging after years usage; 3. Exclusive Non-Balance wear-leveling technology, to increase the lifespan of the disk. 4. Support write-protect function 5. Support the only corresponds: the disk and the host computer. The destruction will be started automatically when the d...

Renice's industrial designed 3U VPX interface SSD storage device, supporting SATA/NVMe/SRIO protocol, maximum capacity up to 16TB. For more information, please contact May Lau at may@renice-tech.com for more information

In ITS (Intelligent Transportation Systems), PIS (Passenger Information System) and other embedded in-vehicle application, such as video surveillance, data recorder…usually or sometimes the voltage changes unstably, SSD as embedded memory and storage device when doing data video recording is aggressively affected by the unstable input voltage. First of all, please let me introduce RBER (Raw-Bit Error Rate), RBER is the Bit Error Rate before ECC (Error Correction Code) performing, reflects the initial reliability of Nand flash. The higher RBER, the less reliability of Nand flash. Then, how Input Voltage Affects the Nand Flash of SSD? Firstly, per 0.3V as a voltage difference in set time, the below graph is 3.3V-3.6V fluctuation. (1) When setting 2.7V - 3.V (standard voltage range of NAND flash), the RBER of NAND flash is 10^(-5.850), which is in normal range. (2) When setting as 3.6V - 3.9V, the RBER begins to increase, reach at 10^(-5.845). (3) When Voltage ran...